2SD400 transistor (npn) features power dissipation p cm : 900 mw collector current i cm: 1 a collector-base voltage v (br)cbo : 25 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 10 a, i e =0 25 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 5 v collector cut-off current i cbo v cb = 20 v, i e =0 1 a emitter cut-off current i ebo v eb = 4 v, i c =0 1 a h fe(1) v ce = 2 v, i c = 50 ma 60 560 dc current gain h fe(2) v ce = 2 v, i c = 1 a 30 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.3 v base-emitter saturation voltage v be(sat) i c = 500 ma, i b = 50 ma 1.2 v transition frequency f t v ce = 10 v, i c = 50 ma 180 mhz output capactiance c ob v cb = 10 v, f=1mhz 15 pf classification of h fe(1) rank d e f g range 60-120 100-200 160-320 280-560 to-92mod 1. emitter 2. collector 3. base 123 yukuto silicon transistor semiconductor http://www.yukuto.com (t a =25 ) (t amb =25 unless otherwise specified) free datasheet http://
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